FA1A4M Datasheet, PDF (1/4 Pages) NEC – MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD

DATA SHEET
SILICON TRANSISTOR
FA1A4M
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
MINI MOLD
FEATURES
• Resistors Built-in TYPE
B
R1
C
R2
E
• Complementary to FN1A4M
PACKAGE DIMENSIONS
in millimeters
2.8±0.2
1.5
0.65^{+–00..115}
2
3
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage VCEO
50
V
Emitter to Base Voltage
VEBO
10
V
Collector Current (DC)
IC
100
mA
Collector Current (Pulse)
IC
200
mA
Total Power Dissipation
PT
200
mW
(TA = 25 ˚C)
Junction temperature
TJ
150
˚C
Storage Temperature Range Tstg –55 to +150 ˚C
Marking : L33
Marking
Electrode Connection
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Low-Level Input Voltage
High-Level Input Voltage
Input Resistor
Resistor Ratio
Turn-on Time
Storage Time
Turn-off Time
SYMBOL
ICBO
hFE1*
hFE2*
VCE(sat)*
VIL*
VIH*
R1
R1/R2
ton
tstg
toff
MIN.
35
80
3.0
7.0
0.9
TYP.
62
230
0.05
1.08
1.4
10
1.0
0.06
2.0
2.15
MAX.
100
100
0.2
0.8
13
1.1
0.2
5.0
6.0
UNIT
nA
V
V
V
kΩ
µs
µs
µs
TEST CONDITIONS
VCB = 50 V, IE = 0
VCE = 5.0 V, IC = 5.0 mA
VCE = 5.0 V, IC = 50 mA
IC = 5.0 mA, IB = 0.25 mA
VCE = 5.0, IC = 100 µA
VCE = 0.2 V, IC = 5.0 mA
VCC = 5 V, Vin = 5 V
RL = 1 kΩ
PW = 2 µs, Duty Cycle ≤ 2 %
* Pulsed: PW = 350 µs, Duty Cycle = 2 %
Document No. D10215EJ3V0DS00 (3rd edition)
(Previous No. TC-1654)
Date Published October 1995 P
Printed in Japan
©
1985