CE2F3P Datasheet, PDF (1/4 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
CE2F3P
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE2F3P is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter as protect
elements. This transistor is ideal for actuator drives of OA
equipments and electric equipments.
FEATURES
• On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ
• Low power consumption during driving:
VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
15
V
Collector current (DC)
IC(DC)
±2.0
A
Collector current (Pulse)
IC(pulse) *
±3.0
A
Base current (DC)
IB(DC)
0.03
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
DC current gain
ICBO
hFE1 **
VCB = 40 V, IE = 0
VCE = 5.0 V, IC = 0.2 A
100
nA
700
1200
−
DC current gain
hFE2 ** VCE = 5.0 V, IC = 1.0 A
1000
1600
3000
−
DC current gain
hFE3 ** VCE = 5.0 V, IC = 2.0 A
500
1200
−
Low level output voltage
Low level input voltage
VOL **
VIL **
VI = 5.0 V, IC = 0.5 A
VCE = 12 V, IC = 100 µA
0.12
0.3
V
0.5
0.4
V
Input resistance 1
R1
1.54
2.2
2.86
kΩ
Input resistance 2
R2
7.0
10.0
13.0
kΩ
Turn-on time
Storage time
Fall time
ton
IC = 1.0 A
tstg
IBI = −IB2 = 10 mA
tf
VCC = 20 V, RL = 20 Ω
0.4
µs
1.4
µs
0.5
µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13110EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928