CE1N2R Datasheet, PDF (1/4 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
CE1N2R
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE1N2R is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
FEATURES
• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ
• Low power consumption during driving:
VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60±10
V
Collector to emitter voltage
VCEO
60±10
V
Emitter to base voltage
VEBO
15
V
Collector current (DC)
IC(DC)
±2.0
A
Collector current (Pulse)
IC(pulse) *
±3.0
A
Base current (DC)
IB(DC)
0.03
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10846EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928