BA1L4Z Datasheet, PDF (1/4 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor

DATA SHEET
COMPOUND TRANSISTOR
BA1L4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R1 = 47 kΩ)
PACKAGE DRAWING (UNIT: mm)
• Complementary transistor with BN1L4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
−55 to +150
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
DC current gain
hFE1 ** VCE = 5.0 V, IC = 5.0 mA
DC current gain
hFE2 ** VCE = 5.0 V, IC = 50 mA
Collector saturation voltage
Low level input voltage
VCE(sat) ** IC = 5.0 mA, IB = 0.25 mA
VIL ** VCE = 5.0 V, IC = 100 µA
High level input voltage
VIH ** VCE = 0.2 V, IC = 5.0 mA
Input resistance
R1
Turn-on time
ton
VCC = 5.0 V, RL = 1.0 kΩ
Storage time
tstg
VI = 5.0 V, PW = 2.0 µs
Turn-off time
toff
duty cycle≤2 %
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
Electrode Connection
1. Emitte
2. Collector
3. Base
MIN.
TYP.
MAX.
Unit
100
nA
135
270
600
−
100
260
−
0.05
0.2
V
0.57
0.5
V
4.0
1.7
V
32.9
47
61.1
kΩ
0.2
µs
5.0
µs
6.0
µs
hFE CLASSIFICATION
Marking
hFE1
Q
P
K
135 to 270
200 to 400
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13582EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928