AB1A4A Datasheet, PDF (1/6 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor

DATA SHEET
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Current drive available up to 0.7 A
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
AB1 SERIES LISTS
Products
AB1A4A
AB1L2Q
AB1A3M
AB1F3P
AB1J3P
AB1L3N
AB1A4M
R1 (KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R2 (KΩ)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10836EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928