3SK254 Datasheet, PDF (1/6 Pages) NEC – RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK254
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Low VDD Use
: (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package
: 4 Pins Super Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
V
Gate1 to Source Voltage
VG1S
±8^*1
V
Gate2 to Source Voltage
VG2S
±8^*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
Total Power Dissipation
PD
25
mA
130^*2
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PACKAGE DIMENSIONS
(Unit: mm)
2.1±0.2
1.25±0.1
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10585EJ2V0DS00 (2nd edition)
(Previous No. TD-2307)
Date Published August 1995 P
Printed in Japan
©
1993