3SK177 Datasheet, PDF (1/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD

DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK177
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR
4 PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High GPS : 20 dB TYP.
• Low NF : 1.1 dB TYP.
PACKAGE DIMENSIONS
in millimeters
2.8^{+–00..32}
1.5^{+–00..12}
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSX
13
V
Gate 1 to Source Voltage VG1S
–4.5
V
Gate2 to Source Voltage VG2S
–4.5
V
Drain Current
ID
40
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
125
˚C
Storage Temperature
Tstg –55 to +125 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 TO Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transter Admittance
SYMBOL
BVDSX
IDSS
VG1S(off)
VG2S(off)
IG1SS
IG2SS
| yfs |
MIN.
13
5
18
TYP.
20
25
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Ciss
0.5
1.0
Crss
0.02
GPS
16.0 20.0
NF
1.1
MAX.
40
–3.5
–3.5
10
10
35
1.5
0.03
2.5
5˚
5˚
5˚ 5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1
UNIT
V
mA
V
V
µA
µA
ms
pF
pF
dB
dB
TEST CONDITIONS
VG1S = –4 V, VG2S = 0, ID = 10 µA
VDS = 5 V, VG2S = 0, VG1S = 0
VDS = 5 V, VG2S = 0, ID = 100 µA
VDS = 5 V, VG1S = 0, ID = 100 µA
VDS = 0, VG1S = –4 V, VG2S = 0
VDS = 0, VG2S = –4 V, VG1S = 0
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1.0 kHz
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
IDSS Classification
Class
Marking
IDSS
U71
U71
5 to 15
U72
U72
10 to 25
Unit: mA
U73
U73
20 to 35
U74
U74
30 to 40
Document No. P10412EJ1V0DS00 (1st edition)
(Previous No. TN-1877)
Date Published August 1995 P
Printed in Japan
©
1995