3P4MH Datasheet, PDF (1/6 Pages) NEC – THYRISTORS

DATA SHEET
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
*TC test bench-mark
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
VRSM
VDSM
VRRM
VDRM
IT(AV)
IT(RMS)
ITSM
∫ it²dt
dIT/dt
PGM
PG(AV)
IFGM
VRGM
Tj
Tstg
3P4MH
3P6MH
500
700
500
700
400
600
400
600
3 (Tc = 87°C, Single half-wave, θ = 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 ms≤t≤10 ms)
50
2 (f≥50 Hz, Duty≤10%)
0.2
1 (f≥50 Hz, Duty≤10%)
6
−40 to +125
−55 tp +150
Ratings
V
V
V
V
A
A
A
Unit
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
Refer to Figure 11.
−
Refer to Figure 2.
A²s
A/µs
W
W
A
V
°C
°C
−
−
Refer to Figure 3.
−
−
−
−
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928