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325S01 Datasheet, PDF (1/1 Pages) NEC – NONLINEAR MODEL
NONLINEAR MODEL NE325S01
SCHEMATIC
GATE
CGD_PKG
0.001pF
Ldx
Lgx
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Q1 0.6nH Rdx
6 ohms
Lsx
0.07nH
Rsx
0.06 ohms
DRAIN
CDS_PKG
0.05PF
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
VTO
-0.8
RG
3
VTOSC
0
RD
2
ALPHA
8
RS
2
BETA
0.103
RGMET
0
GAMMA
0.092
KF
0
GAMMADC
0.08
AF
1
Q
2
TNOM
27
DELTA
1
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
4e-12
CDS
0.13e-12
RDB
5000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
SOURCE
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency:
Bias:
Date:
0.1 to 18 GHz
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V
2/98
(1) Series IV Libra TOM Model
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -10/98