2SK660 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
• Compact package
• High forward transfer admittance
| yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
• Low capacitance
Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
• Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
2SK660
PACKAGE
SST
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage ^Note
VDSX
20
V
Gate to Drain Voltage
VGDO
–20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg –55 to +125 °C
Note VGS = –1.0 V
EQUIVALENT CIRCUIT
Gate
Drain
Source
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10753EJ2V0DS00 (2nd edition)
©
Date Published January 2002 NS CP(K)
Printed in Japan
2002