2SK4178 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Low gate to drain charge
QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
• 4.5 V drive available
ORDERING INFORMATION
PART NUMBER
2SK4178(1)-S27-AY ^Note
2SK4178-ZK-E1-AY ^Note
2SK4178-ZK-E2-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±48
A
±144
A
Total Power Dissipation (TC = 25°C)
PT1
33
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
−55 to +150 °C
IAS
23
A
EAS
52.9
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19080EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007