2SK4143 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4143
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
• Low input capacitance
Ciss = 820 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
2SK4143-S17-AY ^Note
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
Isolated TO-220 typ. 2.2 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
60
V
±20
V
±20
A
±50
A
20
W
2.0
W
150
°C
−55 to +150 °C
15
A
22.5
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(Isolated TO-220)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
6.25
62.5
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18772EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007