2SK4082 Datasheet, PDF (1/7 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A)
• Low gate charge
QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A)
• Gate voltage rating: ±30 V
• Avalanche capability ratings
(Isolated TO-220)
ORDERING INFORMATION
PART NUMBER
2SK4082-S17-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 50 p/tube
PACKAGE
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±3.5
A
±14
A
Total Power Dissipation (TC = 25°C)
PT1
35
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
−55 to +150 °C
IAS
2
A
EAS
240
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007