2SK3919 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3919
2SK3919-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 2050 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±64
A
ID(pulse)
±256
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg −55 to +150 °C
IAS
27
A
EAS
73
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004