2SK3900 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3900
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3900 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3900-ZP
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• Low C iss: C iss = 3500 pF TYP.
• Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±82
A
ID(pulse)
±246
A
Total Power Dissipation (TC = 25°C)
PT1
104
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Energy ^Note2
Repetitive Avalanche Current ^Note3
Repetitive Avalanche Energy ^Note3
Tstg
−55 to +150
°C
EAS
141
mJ
IAR
37.5
A
EAR
141
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004