2SK3812 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3812-ZP
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
• High current rating: ID(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±110
A
ID(pulse)
±440
A
Total Power Dissipation (TC = 25°C)
PT1
213
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Storage Temperature
Single Avalanche Energy ^Note2
Repetitive Avalanche Current ^Note3
Repetitive Avalanche Energy ^Note3
Tch
150
°C
Tstg
−55 to +150
°C
EAS
397
mJ
IAR
63
A
EAR
397
mJ
(TO-263)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004