2SK3755 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3755
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3755 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3755
Isolated TO-220
FEATURES
• Super low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A)
• Low C iss: C iss = 1200 pF TYP.
• Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±45
A
ID(pulse)
±140
A
Total Power Dissipation (TC = 25°C)
PT1
24
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Repetitive Avalanche Energy ^Note3
Tstg
−55 to +150
°C
IAS
23
A
EAS
53
mJ
EAR
53
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
3. IAR ≤ 23 A, Tch ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16641EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004