2SK3749 Datasheet, PDF (1/5 Pages) NEC – N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3749
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
FEATURES
• Gate can be driven by 2.5 V
• Because of its high input impedance, there’s no need to
consider drive current
Marking
ORDERING INFORMATION
PART NUMBER
2SK3749
Marking: G27
PACKAGE
SC-70 (SSP)
1 : Source
2 : Gate
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±100
mA
ID(pulse)
±200
mA
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17136EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004