2SK3740 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, designed for high voltage
applications such as lamp drive, DC/DC converter, and
actuator driver.
FEATURES
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A)
• Low gate charge
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)
• Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3740-ZK
TO-263 (MP-25ZK)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
250
V
±30
V
±20
A
±60
A
1.5
W
100
W
150
°C
–55 to +150 °C
20
A
40
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
°C/W
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16913EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003