2SK3716 Datasheet, PDF (1/7 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3716
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3716 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low Ciss: Ciss = 2700 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3716
TO-251 (MP-3)
2SK3716-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±60
A
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Repetitive Avalanche Current ^Note2
Repetitive Avalanche Energy ^Note2
Tstg
–55 to +150
°C
IAS
32
A
EAS
100
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16538EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003