2SK3714 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3714
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3714 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A)
• Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3714
Isolated TO-220
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±50
A
Drain Current (pulse) ^Note1
ID(pulse)
±160
A
Total Power Dissipation (TC = 25°C)
PT1
35
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
150
°C
−55 to +150
°C
31
A
96
mJ
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16537EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003