2SK3713 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3713
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3713 is N-channel MOS Field Effect Transistor
designed for high voltage and high speed switching
applications.
ORDERING INFORMATION
PART NUMBER
2SK3713-SK
PACKAGE
TO-262
FEATURES
• Super high VGS(off): VGS(off) = 3.8 to 5.8 V
• Low Crss: Crss = 6.5 pF TYP.
• Low QG: QG = 25 nC TYP.
• Low on-state resistance:
RDS(on) = 0.83 Ω MAX. (VGS = 10 V, ID = 5 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
ID(DC)
Drain Current (pulse) ^Note1
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
600
V
±30
V
±10
A
±35
A
100
W
1.5
W
150
°C
−55 to +150 °C
10
A
6
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, L = 100 µH, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16588EJ1V0DS00 (1st edition)
Date Published September 2003 NS CP(K)
Printed in Japan
2003