2SK3712 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
• High voltage: VDSS = 250 V
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.58 Ω MAX. (VGS = 10 V, ID = 4.5 A)
• Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
Repetitive Avalanche Current ^Note3
IAR
Repetitive Pulse Avalanche Energy ^Note3
EAR
250
±30
±9.0
±27
40
1.0
150
–55 to +150
9
8.1
9
8.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3712
TO-251 (MP-3)
2SK3712-Z
TO-252 (MP-3Z)
(TO-251)
V
V
A
A
W
W
(TO-252)
°C
°C
A
mJ
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch(peak) ≤ 150°C, L = 100 µH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16372EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002