2SK3659 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3659
Isolated TO-220
FEATURES
•4.5V drive available.
•Low on-state resistance,
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
•Low gate charge,
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
•Built-in gate protection diode.
•Avalanche capability ratings.
•Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to source voltage (VGS = 0 V)
Gate to source voltage (VDS = 0 V)
VDSS
VGSS
20
V
±20
V
Drain current (DC) (TC = 25°C)
Drain current (pulse) ^Note1
ID(DC)
±65
A
ID(pulse)
±260
A
Total power dissipation (TA = 25°C)
PT1
2.0
W
Total power dissipation (TC = 25°C)
PT2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
−55 to +150 °C
IAS
35
A
EAS
122
mJ
Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition)
©
Date Published June 2002 NS CP (K)
Printed in Japan
2002