2SK3653B Datasheet, PDF (1/5 Pages) NEC – N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653B
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3653B is suitable for converter of ECM.
General-purpose product.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.13
+0.1
–0.05
FEATURES
• Low noise:
−108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Especially suitable for audio and telephone
• Super thin thickness package:
t = 0.37 mm TYP.
3
0 to 0.05
2
1
0.45 0.45
1.4 ±0.1
MAX. 0.4
ORDERING INFORMATION
PART NUMBER
2SK3653B
PACKAGE
3pXSOF (0814)
0.2
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V)
VDSX
20
V
Gate to Drain Voltage
VGDO
−20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg −55 to +125 °C
EQUIVALENT CIRCUIT
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17284EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004