2SK3574 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3574
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
5 ORDERING INFORMATION
The 2SK3574 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
PART NUMBER
2SK3574
2SK3574-S
2SK3574-ZK
2SK3574-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD^Note
FEATURES
•4.5V drive available
Note TO-220SMD package is produced only in Japan.
•Low on-state resistance
RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
•Low gate charge
QG = 22 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)
•Built-in gate protection diode
•Avalanche capability ratings
•Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
30
V
±20
V
±48
A
±140
A
1.5
W
29
W
150
°C
–55 to +150 °C
19
A
36
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16260EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
2002