2SK3573 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3573
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low gate charge
QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)
• Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3573
2SK3573-S
2SK3573-ZK
2SK3573-Z
TO-220AB
TO-262
TO-263
TO-220SMD ^Note
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
20
V
±20
V
±83
A
±332
A
1.5
W
105
W
150
°C
–55 to +150 °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16259EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2002