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2SK3571 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET | |||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3571
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3571 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
â¢4.5V drive available.
â¢Low on-state resistance,
RDS(on)1 = 9.0 m⦠MAX. (VGS = 10 V, ID = 24 A)
â¢Low gate charge
QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
â¢Built-in gate protection diode
â¢Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3571
TO-220AB
2SK3571-S
TO-262
2SK3571-ZK
2SK3571-Z
TO-263
Note
TO-220SMD
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
V
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
±48
A
ID(pulse)
±192
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
â55 to +150 °C
Note PW ⤠10 µs, Duty Cycle ⤠1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16257EJ2V0DS00 (2nd edition) The mark ! shows major revised points.
Date Published September 2002 NS CP (K)
Printed in Japan
©
2002
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