2SK3510 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3510
TO-220AB
FEATURES
• Super low on-state resistance:
RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 8500 pF TYP.
• Built-in gate protection diode
2SK3510-S
TO-262
2SK3510-ZJ
2SK3510-Z
TO-263
TO-220SMD^Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±83
A
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT1
125
W
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
1.5
W
150
°C
(TO-262)
Storage Temperature
Tstg
–55 to +150 °C
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
IAS
69
A
EAS
450
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15687EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
©
Printed in Japan
2001