2SK3507 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3507-ZK
TO-252 (MP-3ZK)
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A)
• Low gate charge
QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
• Built-in G-S protection diode
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation ^Note2
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note3
IAS
Single Avalanche Energy ^Note3
EAS
30
V
±16
V
±22
A
±45
A
20
W
1.5
W
150
°C
−55 to +150 °C
10
A
10
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001