2SK3484 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A)
RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
• Low Ciss: Ciss = 900 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3484
TO-251 (MP-3)
2SK3484-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±16
A
±22
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
10
A
EAS
10
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
4.17 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15069EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002