2SK3467 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3467
TO-220AB
2SK3467-ZK
TO-263(MP-25ZK)
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
V
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) ^Note
ID(DC)
ID(pulse)
±80
A
±320
A
Total Power Dissipation (TA = 25°C) PT1
1.5
W
Total Power Dissipation (TC = 25°C) PT2
76
W
Channel Temperature
Storage Temperature
Tch
150
°C
Tstg
−55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14991EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
©
Printed in Japan
2001