2SK3457 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3457 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3457
Isolated TO-220
FEATURES
• Low gate charge
QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
800
V
±30
V
±5.0
A
±20
A
2.0
W
50
W
150
°C
–55 to +150 °C
5.0
A
73.8
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14754EJ1V0DS00 (1st edition)
©
Date Published June 2002 NS CP(K)
Printed in Japan
2000