2SK3455 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3455
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3455 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications
such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3455
Isolated TO-220
FEATURES
•Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6.0 A)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) ^Note1
Total Power Dissipation (TA = 25°C)
VDSS
500
V
VGSS
±30
V
ID(DC)
±12
A
ID(pulse)
±36
A
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current ^Note2
IAS
12
A
Single Avalanche Energy ^Note2
EAS
103
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14757EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
©
Printed in Japan
2000