2SK3430 Datasheet, PDF (1/4 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3430
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
5 _{RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A)}
5 _{RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A)}
5 _{• Low Ciss: Ciss = 2800 pF TYP.}
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3430
2SK3430-S
TO-220AB
TO-262
2SK3430-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
40
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±80
A
ID(pulse)
±200
A
Total Power Dissipation (TC = 25°C)
PT
84
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
5 _{Single Avalanche Current} ^Note2
5 Single Avalanche Energy ^Note2
Tstg
–55 to +150
°C
IAS
37
A
EAS
137
mJ
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
(TO-262)
(TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14599EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
Date Published March 2000 NS CP(K)
Printed in Japan
©
1999,2000