2SK3408 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16⁺–00..016
3
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
1
2
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
PART NUMBER
2SK3408
PACKAGE
SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
43±5
V
Drain to Gate Voltage (VGS = 0 V)
VDGS
43±5
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±1.0
A
ID(pulse)
±4.0
A
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C) ^Note2
PT2
0.2
W
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: XF
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15016EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
2000