2SK3385 Datasheet, PDF (1/4 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3385
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3385 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3385
PACKAGE
TO-251
FEATURES
• Low On-state Resistance
5 RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 1500 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
2SK3385-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
5 Drain Current (Pulse) ^Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
±30
A
±100
A
36
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
5 Single Avalanche Current ^Note2
5 Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
22
A
EAS
48
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.47
°C/W
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14472EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
Date Published January 2000 NS CP(K)
©
Printed in Japan
1999,2000