2SK3365 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3365
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3365 is N-Channel MOS Field Effect Transistor
designed for DC/DC converters application of notebook
computers.
FEATURES
• Low on-resistance
RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 1300 pF (TYP.)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3365
TO-251
2SK3365-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note
ID(DC)
±30
A
ID(pulse)
±120
A
Total Power Dissipation (TC = 25 °C)
PT
36
W
Total Power Dissipation (TA = 25 °C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
Rth(ch-C)
Rth(ch-A)
3.48
°C/W
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14255EJ1V0DS00 (1st edition)
©
Date Published September 1999 NS CP(K)
Printed in Japan
1999