2SK3360 Datasheet, PDF (1/4 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3360
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3360 is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
• Low on-state resistance
5 RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 18 A)
5 ^{RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 18 A)}
5 • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
• Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3360
Isolated TO-220
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, –10
V
5 Drain Current (DC)
5 ^{Drain Current (pulse) Note1}
ID(DC)
±35
A
ID(pulse)
±140
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
5 Single Avalanche Current ^Note2
5 Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
35
A
EAS
122
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.57
°C/W
62.5
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14331EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
©
Date Published April 2000 NS CP(K)
Printed in Japan
1999