2SK3357 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3357
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3357 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)
• Low Ciss: Ciss = 9800 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3357
TO-3P
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±75
A
ID(pulse)
±300
A
Total Power Dissipation (TC = 25°C)
PT
150
W
Total Power Dissipation (TA = 25°C)
PT
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +150
°C
IAS
75
A
EAS
562
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
0.83
°C/W
41.7
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14134EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published May 2000 NS CP(K)
Printed in Japan
1999, 2000