2SK3356 Datasheet, PDF (1/4 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
5 RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
5 • Low Ciss: Ciss = 6300 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3356
TO-3P
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
±75
A
ID(pulse)
±300
A
PT
130
W
Total Power Dissipation (TA = 25°C)
PT
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
5 _{Single Avalanche Current} ^Note2
5 Single Avalanche Energy ^Note2
Tstg
–55 to +150
°C
IAS
55
A
EAS
302
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
5
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
0.93
°C/W
Rth(ch-A)
41.7
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14133EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1999