2SK3325 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3325
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3325 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge:
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Avalanche capability ratings
• TO-220AB, TO-262, TO-263 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3325
TO-220AB
2SK3325-S
TO-262
2SK3325-ZJ
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
500
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±30
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±10
A
ID(pulse)
±40
A
Total Power Dissipation (TC = 25°C)
PT
85
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
10
A
EAS
10.7
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V ¡ 0 V
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14264EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
©
Printed in Japan
1999, 2000