2SK3324 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
Designed for high voltage applications such as switching
power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3324
PACKAGE
TO-3P
FEATURES
• Low gate charge :
QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS(AC)
±30
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±6
A
±18
A
Total Power Dissipation (TC = 25°C)
PT
120
W
Total Power Dissipation (TA = 25°C)
PT
3.0
W
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to + 150 °C
IAS
6.0
A
EAS
21.6
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14203EJ2V0DS00 (2nd edition)
The mark • shows major revised points.
©
Date Published January 2000 NS CP(K)
Printed in Japan
1999