2SK3297 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3297
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3297 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(ON) = 1.6 Ω MAX. (VGS = 10 V, ID = 2.5 V)
•Avalanche capability ratings
•Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3297
Isolated TO-220
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30
V
Drain Current(DC) (TC = 25°C)
Drain Current(pulse) ^Note1
ID(DC)
ID(pulse)
±5.0
A
±20
A
Total Power Dissipation (TA = 25°C) PT1
2.0
W
Total Power Dissipation (TC = 25°C) PT2
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Single Avalanche Current ^Note2
IAS
5.0
A
Single Avalanche Energy ^Note2
EAS
16.7
mJ
Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 →0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14058EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP (K)
©
Printed in Japan
1999, 2000