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2SK3296 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR | |||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
⢠4.5 V drive available
⢠Low on-state resistance
RDS(on)1 = 12 m⦠MAX. (VGS = 10 V, ID = 18 A)
⢠Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
⢠Built-in gate protection diode
⢠Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3296
TO-220AB
2SK3296-S
2SK3296-ZK
2SK3296-ZJ
TO-262
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
V
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
±35
A
±140
A
Total Power Dissipation (TA = 25°C) PT1
1.5
W
Total Power Dissipation (TC = 25°C) PT2
40
W
Channel Temperature
Storage Temperature
Tch
150
°C
Tstg
â55 to +150 °C
Note PW ⤠10 µs, Duty Cycle ⤠1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14063EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
The mark  shows major revised points.
©
Printed in Japan
1999, 2000
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