2SK3294 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3294
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3294 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A)
• Low input capacitance
Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3294
2SK3294-S
2SK3294-ZJ
TO-220AB
TO-262
TO-263(MP-25ZJ)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
250
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±20
A
±60
A
Total Power Dissipation (TC = 25°C) PT1
100
W
Total Power Dissipation (TA = 25°C) PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
−55 to +150 °C
20
A
150
mJ
(TO-262)
(TO-263)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14061EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP (K)
©
Printed in Japan
1999,2001