2SK3230C Datasheet, PDF (1/5 Pages) NEC – JUNCTION FIELD EFFECT TRANSISTOR

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3230C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
package and low noise, the 2SK3230C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
FEATURES
• Low noise:
−108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Containing a diode and high resistivity, short stability time is
achieved during power-on.
• Small package: SC-89 (TUSM)
ORDERING INFORMATION
PART NUMBER
2SK3230C
PACKAGE
SC-89 (TUSM)
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.1^{+–00..015}
3
2
1
0.5 0.5
1.6 ±0.1
0.2
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V)
VDSX
20
V
Gate to Drain Voltage
VGDO
−20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg −55 to +125 °C
EQUIVALENT CIRCUIT
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18894EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007