2SK3221 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3221 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3211
Isolated TO-220
FEATURES
• Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Avalanche capability ratings
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Diode Recovery dv/dt ^Note3
Tstg
IAS
EAS
dv/dt
600
±30
±2.0
±8.0
2.0
25
150
–55 to +150
2.0
2.7
3.5
V
V
A
A
W
W
°C
°C
A
mJ
V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V
3. IF ≤ 1.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13789EJ1V0DS00 (1st edition)
©
Date Published June 2002 NS CP(K)
Printed in Japan
1998