2SK3204 Datasheet, PDF (1/4 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
• FEATURES
• Low on-state resistance :
RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A)
RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A)
• Low Ciss : Ciss = 940 pF (TYP.)
• Built-in gate protection diode.
• _{ORDERING INFORMATION}
PART NUMBER
PACKAGE
2SK3204
MP-10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, −10
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±15
A
ID(pulse)
±45
A
Total Power Dissipation (TA = 25 °C)
PT
1.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
• Single Avalanche Current ^Note2
IAS
• Single Avalanche Energy ^Note2
EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
−55 to +150 °C
15
A
22.5
mJ
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V
THERMAL RESISTANCE
Channel to Ambient
Rth(ch-A)
69.4 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13796EJ1V0DS00 (1st edition)
The mark • shows major revised points.
©
Date Published April 1999 NS CP (K)
Printed in Japan
1998, 1999