2SK3116 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)
•Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK3116
2SK3116-S
2SK3116-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600
Gate to Source Voltage (VDS = 0 V) VGSS
±30
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±7.5
±30
Total Power Dissipation (TA = 25°C) PT1
1.5
Total Power Dissipation (TC = 25°C) PT2
70
Channel Temperature
Tch
150
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Diode Recovery dv/dt ^Note3
Tstg
IAS
EAS
dv/dt
−55 to +150
7.5
37.5
3.5
V
V
A
A
W
W
°C
°C
A
mJ
V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V
3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13339EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published May 2002 NS CP (K)
Printed in Japan
1998